Share Email Print

Proceedings Paper

Asymmetric Al-free active region laser structure for high-brightness tapered lasers at 975 nm
Author(s): N. Michel; M. Calligaro; M. Lecomte; O. Parillaud; M. Krakowski; J. M. G. Garcia-Tijero; H. Odriozola; I. Esquivias
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We have realized an asymmetric laser structure at 975 nm, based on an Al-free active region. The quantum wells are located near the p-cladding, so that most of the waveguide is n-type, which allows for reduced optical losses and series resistance. On uncoated broad-area lasers, we have obtained very low optical losses of 0.4 cm-1, together with a high internal quantum efficiency of close to 100%. Based on this structure, we have realized index-guided tapered lasers delivering 1.3W CW, with a narrow far-field angle of 2.5° (FWHM) and 5.8° (at 1/e2) in the slow axis, and a good beam propagation ratio M2 = 1.6. The lasers reach a high maximum wall-plug efficiency of 56%. These tapered lasers deliver a maximum power of 1.5W CW with M2 < 3. The results on the asymmetric structure are compared with those of a symmetric laser structure.

Paper Details

Date Published: 1 February 2008
PDF: 9 pages
Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69090R (1 February 2008); doi: 10.1117/12.763404
Show Author Affiliations
N. Michel, Alcatel-Thales III-V Lab. (France)
M. Calligaro, Alcatel-Thales III-V Lab. (France)
M. Lecomte, Alcatel-Thales III-V Lab. (France)
O. Parillaud, Alcatel-Thales III-V Lab. (France)
M. Krakowski, Alcatel-Thales III-V Lab. (France)
J. M. G. Garcia-Tijero, Univ. Politécnica de Madrid (Spain)
H. Odriozola, Univ. Politécnica de Madrid (Spain)
I. Esquivias, Univ. Politécnica de Madrid (Spain)

Published in SPIE Proceedings Vol. 6909:
Novel In-Plane Semiconductor Lasers VII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

© SPIE. Terms of Use
Back to Top