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Proceedings Paper

Pulsed passively mode locked operation of diode pumped Nd:GdVO4 and Nd:YVO4 in a bounce geometry
Author(s): Václav Kubeček; Michal Drahokoupil; Helena Jelínková; Andreas Stintz; Jean-Claude Diels
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Paper Abstract

The operation of pulsed diode pumped Nd:GdVO4 and Nd:YVO4 slab lasers in a bounce geometry in a free running and a passively mode-locked regime using a semiconductor saturable absorber was demonstrated. Higher efficiency of Nd:GdVO4 in both regimes was achieved. In the free running regime the optical to optical efficiency of 28.3% was obtained with Nd:YVO4 and 39.3% with Nd:GdVO4 crystal in spatial mode close to TEM00. In the passively mode locked regime the Q-switched and mode locked single trains containing 5 pulses were generated for a pump energy of 11 mJ from Nd:YVO4 while the pump energy for Nd:GdVO4 was only 5.5 mJ. The pulse duration was 48 ps and 65 ps respectively. Our results clearly demonstrate the advantage of using Nd:GdVO4 in a pulsed free running and also a passively mode locked diode pumped regime in a bounce geometry.

Paper Details

Date Published: 13 March 2008
PDF: 6 pages
Proc. SPIE 6871, Solid State Lasers XVII: Technology and Devices, 68710S (13 March 2008); doi: 10.1117/12.763231
Show Author Affiliations
Václav Kubeček, Czech Technical Univ. (Czech Republic)
Michal Drahokoupil, Czech Technical Univ. (Czech Republic)
Helena Jelínková, Czech Technical Univ. (Czech Republic)
Andreas Stintz, Univ. of New Mexico (United States)
Ctr. for High Technology Materials, Univ. of New Mexico (United States)
Jean-Claude Diels, Univ. of New Mexico (United States)
Ctr. for High Technology Materials, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 6871:
Solid State Lasers XVII: Technology and Devices
W. Andrew Clarkson; Norman Hodgson; Ramesh K. Shori, Editor(s)

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