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Proceedings Paper

High reliability, high power arrays of 808 nm single mode diode lasers employing various quantum well structures
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Paper Abstract

Single mode laser diode arrays operating at 808 nm have been designed and fabricated using several different waveguide and quantum well combinations. In order to operate these devices at 200 mW per element a quantum well intermixing process has been used to render their facets non-absorbing and thus they do not suffer from mirror damage related failure. In this paper we demonstrate extremely high levels of reliability for GaAs and AlGaAs quantum well devices with arrays of 64 elements completing over 6000 hours continuous operation without any single laser element failure and a correspondingly low power degradation rate of <1% k/hr. In contrast we show extremely high power degradation rates for arrays using InGaAs and InAlGaAs 808 nm quantum wells laser arrays.

Paper Details

Date Published: 29 January 2008
PDF: 9 pages
Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69090S (29 January 2008); doi: 10.1117/12.763208
Show Author Affiliations
B. C. Qiu, Intense, Ltd. (United Kingdom)
O. Kowalski, Intense, Ltd. (United Kingdom)
S. D. McDougall, Intense, Ltd. (United Kingdom)
X. F. Liu, Intense, Ltd. (United Kingdom)
J. H. Marsh, Intense, Ltd. (United Kingdom)

Published in SPIE Proceedings Vol. 6909:
Novel In-Plane Semiconductor Lasers VII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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