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Proceedings Paper

AlGaN/SiC heterojunction bipolar transistor
Author(s): Ya. I. Alivov; Q. Fan; X. Ni; S. Chevtchenko; I. B. Bhat; H. Morkoç
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Paper Abstract

AlGaN/6H-SiC heterojunction bipolar transistors (HBTs) were fabricated, and the device performance as well as the electrical properties of the n-AlGaN/p-SiC heterojunction were studied by temperature dependent current-voltage characterization. Current gain β=IC/IB calculated from I-V characteristics varied from sample to sample in the range of 75-100. A barrier height of 1.1 eV is derived from the Arrhenius plot and its origin is discussed.

Paper Details

Date Published: 15 February 2008
PDF: 5 pages
Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68941W (15 February 2008); doi: 10.1117/12.763143
Show Author Affiliations
Ya. I. Alivov, Virginia Commonwealth Univ. (United States)
Q. Fan, Virginia Commonwealth Univ. (United States)
X. Ni, Virginia Commonwealth Univ. (United States)
S. Chevtchenko, Virginia Commonwealth Univ. (United States)
I. B. Bhat, Rensselaer Polytechnic Institute (United States)
H. Morkoç, Virginia Commonwealth Univ. (United States)


Published in SPIE Proceedings Vol. 6894:
Gallium Nitride Materials and Devices III
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Euijoon Yoon, Editor(s)

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