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Proceedings Paper

Tunable lasers based on diode pumped Tm-doped vanadates Tm:YVO4, Tm:GdVO4, and Tm:LuVO4
Author(s): Jan Šulc; Petr Koranda; Pavel Černý; Helena Jelínková; Yoshiharu Urata; Mikio Higuchi; Witold Ryba-Romanowski; Radosław Lisiecki; Piotr Solarz; Grażina Dominiak-Dzik; Marcin Sobczyk
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Paper Abstract

Thulium doped vanadates Tm:YVO4 (5 at.% Tm/Y, grown by the Czochralski technique), Tm:GdVO4 (2 and 6 at.% Tm/Gd, grown by the floating-zone technique), and Tm:LuVO4 (3 at.% Tm/Y, grown by the floating-zone technique) were investigated as an active medium for diode pumped tunable laser operating around 1.9 μm. For thulium laser tuning single 1.5mm thick Brewster-angled birefringent quartz plate (Lyot filter) was placed in simple 80mm long linear quasi-hemispherical resonator. For thulium doped vanadates pumping a fibre-coupled (core diameter 400 μm) temperature-tuned laser diode operating in range from 799 up to 810nm was used (max available power 20 W). All tested crystals were investigated under CW and pulsed pumping. Under pulsed pumping (4% duty-cycle, reduced heat generation) lasing and laser tuning was demonstrated with all available samples. Lasers were tunable in following wavelength ranges: Tm:YVO4 5 at.% Tm/Y (1841 - 1927 nm), Tm:GdVO4 2 at.% Tm/Gd (1830 - 1982 nm), 6 at.% Tm/Gd (1850 - 2010 nm), and Tm:LuVO4 3 at.% Tm/Lu (1860 - 1940 nm). Under CW pumping only Tm:GdVO4 crystal was lasing (lasing of Tm:YVO4 and Tm:LuVO4 was not reached under elevated pumping duty factor). Using Tm:GdVO4 (2 at.% Tm/Gd) the power up to 2.6W and slope effciency ~ 30% (with respect to absorbed power at 808nm under lasing condition) was obtained at wavelength 1.91 μm. Tunable operation with greater that 1W output and 130nm tuning range (1842 - 1972 nm) was demonstrated for Tm:GdVO4 (2 at.% Tm/Gd) pumped at 802 nm.

Paper Details

Date Published: 13 March 2008
PDF: 9 pages
Proc. SPIE 6871, Solid State Lasers XVII: Technology and Devices, 68711V (13 March 2008); doi: 10.1117/12.763011
Show Author Affiliations
Jan Šulc, Czech Technical Univ. (Czech Republic)
Petr Koranda, Czech Technical Univ. (Czech Republic)
Pavel Černý, Czech Technical Univ. (Czech Republic)
Helena Jelínková, Czech Technical Univ. (Czech Republic)
Yoshiharu Urata, Megaopto Co., Ltd. (Japan)
Mikio Higuchi, Hokkaido Univ. (Japan)
Witold Ryba-Romanowski, Institute of Low Temperature and Structure Research (Poland)
Radosław Lisiecki, Institute of Low Temperature and Structure Research (Poland)
Piotr Solarz, Institute of Low Temperature and Structure Research (Poland)
Grażina Dominiak-Dzik, Institute of Low Temperature and Structure Research (Poland)
Marcin Sobczyk, Univ. of Wrocław (Poland)


Published in SPIE Proceedings Vol. 6871:
Solid State Lasers XVII: Technology and Devices
W. Andrew Clarkson; Norman Hodgson; Ramesh K. Shori, Editor(s)

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