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Proceedings Paper

AlGaInAs quantum-well 1.3-μm laser by a diode-pumped actively Q-switched Nd:GdVO4 laser
Author(s): S. C. Huang; K. W. Su; A. Li; S. C. Liu; Y. F. Chen; K. F. Huang
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Paper Abstract

We report a high-peak-power AlGaInAs 1.36-μm vertical-external-cavity surface-emitting laser (VECSEL) optically pumped by a diode-pumped actively Q-switched Nd:GdVO4 1.06-µm laser under room-temperature operation. The gain medium is an AlGaInAs quantum wells (QWs)/barrier structure grown on a Fe-doped InP substrate by metalorganic chemical-vapor deposition. With an average pump power of 1.9 W, an average output power of 340 mW was obtained at a pulse repetition rate of 40 kHz, corresponding to an optical-to-optical conversion efficiency of 18.76%. With a peak pump power of 7.9 kW, the highest peak output power was 1.3 kW at a pulse repetition rate of 10 kHz.

Paper Details

Date Published: 14 February 2008
PDF: 6 pages
Proc. SPIE 6871, Solid State Lasers XVII: Technology and Devices, 68712K (14 February 2008); doi: 10.1117/12.762962
Show Author Affiliations
S. C. Huang, National Chiao Tung Univ. (Taiwan)
K. W. Su, National Chiao Tung Univ. (Taiwan)
A. Li, National Chiao Tung Univ. (Taiwan)
S. C. Liu, National Chiao Tung Univ. (Taiwan)
Y. F. Chen, National Chiao Tung Univ. (Taiwan)
K. F. Huang, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 6871:
Solid State Lasers XVII: Technology and Devices
W. Andrew Clarkson; Norman Hodgson; Ramesh K. Shori, Editor(s)

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