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Proceedings Paper

Mid-infrared tunable laser based on the Cr:ZnSe active crystal
Author(s): Petr Koranda; Helena Jelínková; Michal Nemec; Jan Šulc; Maxim E. Doroshenko; Tasoltan T. Basiev; Vitaly K. Komar; Andriy S. Gerasimenko; Vyacheslav M. Puzikov; V. V. Badikov; D. V. Badikov
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Paper Abstract

Broadly tunable mid-infrared laser sources operated at room-temperature are desired in many technological and medical applications. The aim of the project was to design and construct broadly tunable powerful Cr:ZnSe laser. The investigated Cr:ZnSe various shaped bulk crystals were grown by the Bridgman method or by the floating zone method. The absorption spectrum was measured to be from 1500 to 2000 nm and the emission spectrum was from 2100 to 2800 nm. Three different lasers were utilized for coherent longitudinal pumping of Cr:ZnSe laser, namely flashlamp-pumped Er:YAP laser (generated wavelength 1660 nm), diode-pumped Tm:YLF laser (generated wavelength 1912 nm) and diode-pumped Tm:YAP laser (generated wavelength 1980 nm). The constructed Cr:ZnSe laser operated in pulsed as well as in continuous-wave regime. In the first case the Cr:ZnSe crystal grown by the floating zone method was studied. The maximal output power in continuous-wave regime was 310 mW with the slope-efficiency 73% for the Tm:YAP laser pumping. In the second case the Cr:ZnSe prism grown by the Bridgman method which served simultaneously as laser active medium and intracavity dispersive element was investigated. For the Er:YAP laser pumping the maximal output energy was 20 mJ with the slope-efficiency 36%. The output radiation was tunable in the range from 2050 nm up to 2750 nm. For the Tm:YAP laser pumping the maximal output power in continuous-wave regime was 175 mW with the slope-efficiency 24%. The output radiation was tunable in the interval from 2220 nm up to 2680 nm. The generated radiation beam spatial structure was close to TEM00.

Paper Details

Date Published: 5 March 2008
PDF: 9 pages
Proc. SPIE 6871, Solid State Lasers XVII: Technology and Devices, 68711T (5 March 2008); doi: 10.1117/12.762899
Show Author Affiliations
Petr Koranda, Czech Technical Univ. (Czech Republic)
Helena Jelínková, Czech Technical Univ. (Czech Republic)
Michal Nemec, Czech Technical Univ. (Czech Republic)
Jan Šulc, Czech Technical Univ. (Czech Republic)
Maxim E. Doroshenko, General Physics Institute (Russia)
Tasoltan T. Basiev, General Physics Institute (Russia)
Vitaly K. Komar, Institute for Single Crystals (Ukraine)
Andriy S. Gerasimenko, Institute for Single Crystals (Ukraine)
Vyacheslav M. Puzikov, Institute for Single Crystals (Ukraine)
V. V. Badikov, Kuban State Univ. (Russia)
D. V. Badikov, Kuban State Univ. (Russia)

Published in SPIE Proceedings Vol. 6871:
Solid State Lasers XVII: Technology and Devices
W. Andrew Clarkson; Norman Hodgson; Ramesh K. Shori, Editor(s)

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