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Proceedings Paper

High-performance optically pumped GaSb-based semiconductor disk lasers for the 2.Xum wavelength range
Author(s): M. Rattunde; N. Schulz; B. Rösener; C. Manz; K. Köhler; J. Wagner; J.-M. Hopkins; D. Burns
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Paper Abstract

We report on recent advances in the performance of GaSb-based optically pumped semiconductor disk lasers (OPSDLs), emitting in the 2.0 - 2.3 μm wavelength range. Both barrier pumped OPSDL (using 980 nm laser diodes as pump source) and in-well pumped OPSDL (using 1.96 μm pump radiation) have been fabricated and characterized. Using alternative SiC or diamond intracavity heatspreader, multiple-watt CW-output powers have been achieved (e.g. >3W at 2.3 μm and >5W at 2.0 μm), with power efficiencies in the range of 18 % - 25 %. For an optimised resonator setup, the beam profile is close to the diffraction limit with M2 values around 1.2; and even for the highest power levels, M2 is in the range of 2-5.

Paper Details

Date Published: 14 February 2008
PDF: 12 pages
Proc. SPIE 6871, Solid State Lasers XVII: Technology and Devices, 68710Z (14 February 2008); doi: 10.1117/12.762873
Show Author Affiliations
M. Rattunde, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
N. Schulz, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
B. Rösener, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
C. Manz, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
K. Köhler, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
J. Wagner, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
J.-M. Hopkins, Univ. of Strathclyde (United Kingdom)
D. Burns, Univ. of Strathclyde (United Kingdom)


Published in SPIE Proceedings Vol. 6871:
Solid State Lasers XVII: Technology and Devices
W. Andrew Clarkson; Norman Hodgson; Ramesh K. Shori, Editor(s)

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