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Proceedings Paper

1-W red light generation by intracavity doubling in a 1240 nm GaInNAs semiconductor disk laser
Author(s): Jussi Rautiainen; Antti Härkönen; Pietari Tuomisto; Janne Konttinen; Lasse Orsila; Mircea Guina; Oleg G. Okhotnikov
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Paper Abstract

Owing to their good beam quality and high output power, near-infrared semiconductor disk lasers provide an attractive opportunity for visible light generation via frequency conversion. The typical cavity arrangement of a semiconductor disk laser, consisting of a semiconductor multiple quantum well gain mirror and one or more external mirror, offers a convenient configuration for intracavity frequency doubling. Recent progress in the disk laser development has led to demonstrations of multi-watt green-blue-yellow sources. These achievements have been enabled by the possibility to integrate high performance InGaAs/GaAs gain media and Al(Ga)As/GaAs Bragg reflectors operating in the 940-1160 nm wavelength range. In order to achieve ~620 nm red emission, a laser emitting near the fundamental wavelength of 1240 nm is needed. To achieve this spectral range we have developed GaInNAs/GaAs gain mirrors and we have achieved 1 W of output power at 617 nm by frequency doubling in a BBO crystal. This is to our knowledge the highest power reported to date for intracavity doubled disk laser based on dilute nitride gain material.

Paper Details

Date Published: 14 February 2008
PDF: 8 pages
Proc. SPIE 6871, Solid State Lasers XVII: Technology and Devices, 68711A (14 February 2008); doi: 10.1117/12.762857
Show Author Affiliations
Jussi Rautiainen, Tampere Univ. of Technology (Finland)
Antti Härkönen, Tampere Univ. of Technology (Finland)
Pietari Tuomisto, EpiCrystals, Inc. (Finland)
Janne Konttinen, EpiCrystals, Inc. (Finland)
Lasse Orsila, Tampere Univ. of Technology (Finland)
Mircea Guina, Tampere Univ. of Technology (Finland)
Oleg G. Okhotnikov, Tampere Univ. of Technology (Finland)


Published in SPIE Proceedings Vol. 6871:
Solid State Lasers XVII: Technology and Devices
W. Andrew Clarkson; Norman Hodgson; Ramesh K. Shori, Editor(s)

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