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Proceedings Paper

High-peak-power diode-pumped actively Q-switched Nd:YAG intracavity Raman laser with an undoped YVO4 crystal
Author(s): K. W. Su; Y. T. Chang; Y. F. Chen
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Paper Abstract

The efficient stimulated Raman scattering conversion in a diode-pumped actively Q-switched Nd:YAG laser was achieved with an undoped YVO4 crystal as a Raman shifter. With an incident pump power of 16.2 W, 1176-nm first Stokes average output power of 2.97 W was generated at a pulse repetition rate of 50 kHz. The maximum pulse energy is higher than 83 μJ at both 20 kHz and 30 kHz. With mode-locked modulation, the effective pulse width far above threshold is usually below 5 ns. With an incident pump power of 7.62 W, the peak-power of 43.5 kW was demonstrated at 20 kHz.

Paper Details

Date Published: 5 March 2008
PDF: 8 pages
Proc. SPIE 6871, Solid State Lasers XVII: Technology and Devices, 68712J (5 March 2008); doi: 10.1117/12.762821
Show Author Affiliations
K. W. Su, National Chiao Tung Univ. (Taiwan)
Y. T. Chang, National Chiao Tung Univ. (Taiwan)
Y. F. Chen, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 6871:
Solid State Lasers XVII: Technology and Devices
W. Andrew Clarkson; Norman Hodgson; Ramesh K. Shori, Editor(s)

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