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Proceedings Paper

An all-silicon channel waveguide fabricated using direct proton beam writing
Author(s): E. J. Teo; A. A. Bettiol; M. B. H. Breese; P. Y. Yang; G. Z. Mashanovich; W. R. Headley; G. T. Reed; D. J. Blackwood
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Paper Abstract

We report a novel technique for the fabrication of an all-silicon channel waveguide using direct proton beam writing and subsequent electrochemical etching. A focused beam of high energy protons is used to selectively inhibit porous silicon formation in the irradiated regions. By over-etching beyond the ion range, the irradiated region becomes surrounded by porous silicon cladding. Waveguide characterization carried out at 1550 nm on the proton irradiated waveguide shows that the propagation losses improve significantly from 20±2 dB/cm to 9±2 dB/cm after vacuum annealing at 800°C for 1 hour.

Paper Details

Date Published: 13 February 2008
PDF: 7 pages
Proc. SPIE 6898, Silicon Photonics III, 68980Q (13 February 2008); doi: 10.1117/12.762771
Show Author Affiliations
E. J. Teo, National Univ. of Singapore (Singapore)
A. A. Bettiol, National Univ. of Singapore (Singapore)
M. B. H. Breese, National Univ. of Singapore (Singapore)
P. Y. Yang, Univ. of Surrey (United Kingdom)
G. Z. Mashanovich, Univ. of Surrey (United Kingdom)
W. R. Headley, Univ. of Surrey (United Kingdom)
G. T. Reed, Univ. of Surrey (United Kingdom)
D. J. Blackwood, National Univ. of Singapore (Singapore)

Published in SPIE Proceedings Vol. 6898:
Silicon Photonics III
Joel A. Kubby; Graham T. Reed, Editor(s)

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