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Proceedings Paper

12W CW operation of 640nm-band laser diode array
Author(s): Naoyuki Shimada; Kimitaka Shibata; Yoshihiko Hanamaki; Tsuneo Hamaguchi; Tetsuya Yagi
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Paper Abstract

A high-power and short-wavelength GaInP/AlGaInP quantum-well laser diode array was designed and fabricated. Because a conduction band offset of this material system is small, a carrier leakage from an active layer is an important limiting factor of the maximum light output. In this work, long cavity length of 1.5 mm, high front facet reflectivity of 18% and AlInP cladding layers were adopted to reduce the leakage. An evaluation test of the fabricated array was performed under CW operation. At 15°C, high light output of 12W was obtained with injection current of 16A. The lasing wavelength was 643.3 nm. Moreover, high wall-plug efficiency of 34% was achieved. These excellent characteristics are considered to be due to the effective suppression of the carrier leakage.

Paper Details

Date Published: 13 February 2008
PDF: 8 pages
Proc. SPIE 6876, High-Power Diode Laser Technology and Applications VI, 68760L (13 February 2008); doi: 10.1117/12.762757
Show Author Affiliations
Naoyuki Shimada, Mitsubishi Electric Corp. (Japan)
Kimitaka Shibata, Mitsubishi Electric Corp. (Japan)
Yoshihiko Hanamaki, Mitsubishi Electric Corp. (Japan)
Tsuneo Hamaguchi, Mitsubishi Electric Corp. (Japan)
Tetsuya Yagi, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 6876:
High-Power Diode Laser Technology and Applications VI
Mark S. Zediker, Editor(s)

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