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Proceedings Paper

A GaN-based surface-emitting laser with 45degree-inclined mirror in horizontal cavity
Author(s): Masao Kawaguchi; Satoshi Tamura; Masaaki Yuri; Daisuke Ueda
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Paper Abstract

A novel GaN-based surface-emitting laser was realized by utilizing total internal reflection (TIR) by an inclined mirror formed at one end of the horizontal cavity of an edge-emitting laser. The inclined mirror was fabricated by focused ion beam (FIB) etching. The mirror was inclined by 45° with respect to the surface normal. The guided light propagating along the horizontal-cavity is reflected at the mirror to the surface normal. We analyzed optical losses in the laser. To increase the external quantum efficiency, removal of an FIB-damaged layer and precise control of the mirror angle are important. Argon-milling was applied to the FIB-etched surface to remove the FIB-damaged layer which causes an optical loss. The fabricated device with the stripe width of 8 µm and the cavity length of 600 μm lased at 390 nm with a threshold current of 260 mA. Surface-emission was obtained with beam divergence angles of 24.0° and 6.2°, corresponding to perpendicular and parallel to the junction plane, respectively. The presented surface-emitting laser is suitable to form high-power GaN-based 2D laser arrays.

Paper Details

Date Published: 29 January 2008
PDF: 8 pages
Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69090F (29 January 2008); doi: 10.1117/12.762502
Show Author Affiliations
Masao Kawaguchi, Matsushita Electric Industrial Co., Ltd. (Japan)
Satoshi Tamura, Matsushita Electric Industrial Co., Ltd. (Japan)
Masaaki Yuri, Matsushita Electric Industrial Co., Ltd. (Japan)
Daisuke Ueda, Matsushita Electric Industrial Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 6909:
Novel In-Plane Semiconductor Lasers VII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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