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Proceedings Paper

Piezoelectric quantum 1/f noise in nitride-based heterostructures
Author(s): Peter H. Handel; Hadis Morkoc; Engkee Sia; Amanda M. Truong
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Paper Abstract

There are as many types of quantum 1/f noise [1], [2], as there are systems of massless infraquanta with infrared-divergent coupling to the current carriers. Each of these types has a conventional and coherent part, corresponding to terms in the hamiltonian that are proportional with the first and second power of the number of carriers defining the current, respectively. In piezoelectric materials, particularly those also showing ferroelectric spontaneous polarization, transversal phonons are the massless quanta leading to piezoelectric, or lattice-dynamic, quantum 1/f effects, again both conventional and coherent. As in the usual QED case, the observable 1/f noise is approximated by a weighted sum of the conventional and coherent quantum 1/f effects. The sum involves the coherence parameter, this time denoted by s', in the weight factors. The parameter s' is also estimated from first principles. The general formula involving s' is applied to bulk GaN and AlGaN grown with different methods, and includes the dependence on stress and polarization. It also includes the dependence on stress and the geometry of the sample. It is important both for reliability testing and for general device optimization.

Paper Details

Date Published: 28 February 2008
PDF: 14 pages
Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68941N (28 February 2008); doi: 10.1117/12.762387
Show Author Affiliations
Peter H. Handel, Univ. of Missouri, St. Louis (United States)
Hadis Morkoc, Virginia Commonwealth Univ. (United States)
Engkee Sia, Singapore Institute of Management Univ. (Singapore)
Amanda M. Truong, Univ. of Missouri, St. Louis (United States)


Published in SPIE Proceedings Vol. 6894:
Gallium Nitride Materials and Devices III
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Euijoon Yoon, Editor(s)

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