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Proceedings Paper

Spectral properties of thick split ring resonators in the THz regime
Author(s): Sher-Yi Chiam; Jiaguang Han; Ranjan Singh; Weili Zhang; Thomas Osipowicz; Andrew A. Bettiol
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Paper Abstract

We fabricated and studied a planar composite material consisting of sub-wavelength double split ring resonator structures made of Gold on a Silicon substrate. Our measurements reveal a strong transmission dip at 0.6 THz. Experimental and numerical results indicate that there is an Inductor-Capacitor resonance at 0.6 THz, characterized by enhanced electric field strength across the ring gap. Our results also indicate a shift in the resonance to higher frequencies as thickness is increased. Spectral properties of the composite material were measured using THz Time Domain Spectroscopy in the range from 0.1 THz to 3.5 THz. Simulations were carried out using the commercially available electromagnetic solver, Microwave StudioTM. Fabrication of the structures was done with Proton Beam Writing, a nanolithography technique based on focused MeV protons. The direct-write technique allowed us to fabricate structures much thicker than otherwise possible. For this work, the ring resonator structures had overall dimensions of 38 μm and a thickness of 8 μm with highly vertical and smooth sidewalls with minimum critical dimensions of 2 μm.

Paper Details

Date Published: 6 February 2008
PDF: 8 pages
Proc. SPIE 6893, Terahertz Technology and Applications, 68930A (6 February 2008); doi: 10.1117/12.762369
Show Author Affiliations
Sher-Yi Chiam, National Univ. of Singapore (Singapore)
Jiaguang Han, National Univ. of Singapore (Singapore)
Ranjan Singh, Oklahoma State Univ. (United States)
Weili Zhang, Oklahoma State Univ. (United States)
Thomas Osipowicz, National Univ. of Singapore (Singapore)
Andrew A. Bettiol, National Univ. of Singapore (Singapore)

Published in SPIE Proceedings Vol. 6893:
Terahertz Technology and Applications
Kurt J. Linden; Laurence P. Sadwick, Editor(s)

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