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Proceedings Paper

Dynamics of LO phonons in InN studied by subpicosecond time-resolved Raman spectroscopy
Author(s): K. T. Tsen; Juliann G. Kiang; D. K. Ferry; Hai Lu; William J. Schaff; Hon-Way Lin; Shangjr Gwo
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Paper Abstract

Time-resolved Raman spectroscopy on a subpicosecond time scale has been used to study the phonon dynamics of both the A1(LO) and the E1(LO) phonons in InN. From the temperature-dependence of their lifetimes, we demonstrate that both phonons decay primarily into a large wavevector TO phonon and a large wavevector TA/LA phonon consistent with the accepted phonon dispersion relationship for wurtzite InN. Their lifetimes have been found to decrease from 2.2 ps, at the low electron-hole pair density of 5×1017cm-3 to 0.25 ps, at the highest density of 2×1019cm-3. Our experimental findings demonstrate that carrier-density dependence of LO phonon lifetime is a universal phenomenon in polar semiconductors.

Paper Details

Date Published: 14 February 2008
PDF: 12 pages
Proc. SPIE 6892, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII, 689206 (14 February 2008); doi: 10.1117/12.762319
Show Author Affiliations
K. T. Tsen, Arizona State Univ. (United States)
Juliann G. Kiang, Uniformed Services Univ. of the Health Sciences (United States)
D. K. Ferry, Arizona State Univ. (United States)
Hai Lu, Cornell Univ. (United States)
William J. Schaff, Cornell Univ. (United States)
Hon-Way Lin, National Tsing-Hua Univ. (Taiwan)
Shangjr Gwo, National Tsing-Hua Univ. (Taiwan)

Published in SPIE Proceedings Vol. 6892:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII
Jin-Joo Song; Kong-Thon Tsen; Markus Betz; Abdulhakem Y. Elezzabi, Editor(s)

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