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Proceedings Paper

GaInNAsSb/GaAs vertical cavity surface-emitting lasers (VCSELs): current challenges and techniques to realize multiple-wavelength laser arrays at 1.55 μm
Author(s): Mathilde Gobet; Hopil P. Bae; Tomas Sarmiento; James S. Harris
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Paper Abstract

Multiple-wavelength laser arrays at 1.55 μm are key components of wavelength division multiplexing (WDM) systems for increased bandwidth. Vertical cavity surface-emitting lasers (VCSELs) grown on GaAs substrates outperform their InP counterparts in several points. We summarize the current challenges to realize continuous-wave (CW) GaInNAsSb VCSELs on GaAs with 1.55 μm emission wavelength and explain the work in progress to realize CW GaInNAsSb VCSELs. Finally, we detail two techniques to realize GaInNAsSb multiple-wavelength VCSEL arrays at 1.55 μm. The first technique involves the incorporation of a photonic crystal into the upper mirror. Simulation results for GaAs-based VCSEL arrays at 1.55 μm are shown. The second technique uses non-uniform molecular beam epitaxy (MBE). We have successfully demonstrated 1x6 resonant cavity light-emitting diode arrays at 850 nm using this technique, with wavelength spacing of 0.4 nm between devices and present these results.

Paper Details

Date Published: 1 February 2008
PDF: 12 pages
Proc. SPIE 6908, Vertical-Cavity Surface-Emitting Lasers XII, 69080N (1 February 2008); doi: 10.1117/12.762311
Show Author Affiliations
Mathilde Gobet, Ctr. for Integrated Systems (United States)
Hopil P. Bae, Ctr. for Integrated Systems (United States)
Tomas Sarmiento, Ctr. for Integrated Systems (United States)
James S. Harris, Ctr. for Integrated Systems (United States)


Published in SPIE Proceedings Vol. 6908:
Vertical-Cavity Surface-Emitting Lasers XII
Chun Lei; James K. Guenter, Editor(s)

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