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Proceedings Paper

Why InGaN laser-diode degradation is accompanied by the improvement of its thermal stability
Author(s): L. Marona; P. Wiśniewski; M. Leszczyński; I. Grzegory; T. Suski; S. Porowski; R. Czernecki; A. Czerwinski; M. Pluska; J. Ratajczak; P. Perlin
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Paper Abstract

In this paper we present reliability study of violet, InGaN based laser diodes grown on low dislocation density bulk GaN crystals. We observe two main phenomena responsible for degradation in our laser diodes. One of them is the increase of nonradiative recombination in quantum wells which is visible on cathodoluminescence images. The second mechanisms is connected to the increase of leakage current seems to be responsible for the observed evolution of the characteristic temperature of laser diodes.

Paper Details

Date Published: 15 February 2008
PDF: 10 pages
Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68940R (15 February 2008); doi: 10.1117/12.762220
Show Author Affiliations
L. Marona, High Pressure Research Ctr. Unipress (Poland)
P. Wiśniewski, High Pressure Research Ctr. Unipress (Poland)
M. Leszczyński, High Pressure Research Ctr. Unipress (Poland)
TopGaN Ltd. (Poland)
I. Grzegory, High Pressure Research Ctr. Unipress (Poland)
TopGaN Ltd. (Poland)
T. Suski, High Pressure Research Ctr. Unipress (Poland)
S. Porowski, High Pressure Research Ctr. Unipress (Poland)
R. Czernecki, TopGaN Ltd. (Poland)
A. Czerwinski, Institute of Electron Technology (Poland)
M. Pluska, Institute of Electron Technology (Poland)
J. Ratajczak, Institute of Electron Technology (Poland)
P. Perlin, High Pressure Research Ctr. Unipress (Poland)
TopGaN Ltd. (Poland)


Published in SPIE Proceedings Vol. 6894:
Gallium Nitride Materials and Devices III
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Euijoon Yoon, Editor(s)

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