Share Email Print
cover

Proceedings Paper

Length dependences of in-plane polarizations anisotropy in GaInAsP/InP quantum-wire structures fabricated by dry etching and regrowth process
Author(s): D. Plumwongrot; Y. Tamura; Y. Nishimoto; M. Kurokawa; T. Okumura; T. Maruyama; N. Nishiyama; S. Arai
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Wire-length dependences of In-place polarization anisotropy in GaInAsP/InP quantum-wire (Q-wire) structures fabricated by dry-etching and regrowth processes were investigated using a photo luminescence (PL) measurement. The reduction of polarization anisotropy of Q-wires is expected in the shorter Q-Wires. A strain-compensated GaInAsP/InP single-quantum-well initial wafer was prepared by an organometallic-vapor-phase-epitaxy (OMVPE) system. Using electron beam lithography, Ti-mask lift-off, CH4/H2 reactive-ion-etching and OMVPE regrowth processes, various lengths (L) of the Q-wires were realized for wire-widths (W) of 11-, 14- and 18 nm. The Q-wires were measured the polarization property in normal and parallel to wire-length direction at room temperature. As a result, stronger polarization anisotropy was observed in narrower Q-Wires and reduced in shorter length of Q-Wires. Furthermore, polarization anisotropy of strained Q-Wires was predicted by taking in account of the dipole moment interaction between conduction and heavy-hole subbands optical transition. A 5-nm narrowed wire-width calculation results shows a good agreement with experimental results. This could be considered that a strain distribution in the Q-Wire induced the energy band deformation at the edge of the Q-Wire, which reduced the effective wire-width to much narrower than the actual size observed by an SEM image.

Paper Details

Date Published: 11 February 2008
PDF: 9 pages
Proc. SPIE 6902, Quantum Dots, Particles, and Nanoclusters V, 690205 (11 February 2008); doi: 10.1117/12.762201
Show Author Affiliations
D. Plumwongrot, Tokyo Institute of Technology (Japan)
Y. Tamura, Tokyo Institute of Technology (Japan)
Y. Nishimoto, Tokyo Institute of Technology (Japan)
M. Kurokawa, Tokyo Institute of Technology (Japan)
T. Okumura, Tokyo Institute of Technology (Japan)
T. Maruyama, Tokyo Institute of Technology (Japan)
JST-CREST (Japan)
N. Nishiyama, Tokyo Institute of Technology (Japan)
S. Arai, Tokyo Institute of Technology (Japan)
JST-CREST (Japan)


Published in SPIE Proceedings Vol. 6902:
Quantum Dots, Particles, and Nanoclusters V
Kurt G. Eyink; Frank Szmulowicz; Diana L. Huffaker, Editor(s)

© SPIE. Terms of Use
Back to Top