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Proceedings Paper

AlGaN/GaN multiple quantum wells grown by atomic layer deposition
Author(s): M. H. Lo; Z. Y. Li; J. R. Chen; T. S. Ko; T. C. Lu; H. C. Kuo; S. C. Wang
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Paper Abstract

A three-pair AlGaN/GaN multiple quantum well (MQW) structure with superlattices (SLs) was grown on c-plane sapphire using metal organic chemical vapor deposition (MOCVD) system. The AlGaN barrier and GaN well of the MQW structure were grown by atomic layer deposition (ALD) and conventional growth, respectively. The HRTEM and HRXRD results show the grown structure has shape interface between SLs layers and QWs with good periodicity. The AFM and SEM data show smooth surface morphology with low RMS value and low defect density. The CL measurements also indicate uniform luminescence pattern at room temperature. The AlGaN/GaN MQW with AlN/GaN SLs structure grown by ALD could be used to improve the surface morphology by effectively suppress the threading dislocation.

Paper Details

Date Published: 15 February 2008
PDF: 9 pages
Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68941V (15 February 2008); doi: 10.1117/12.762158
Show Author Affiliations
M. H. Lo, National Chiao Tung Univ. (Taiwan)
Z. Y. Li, National Chiao Tung Univ. (Taiwan)
J. R. Chen, National Chiao Tung Univ. (Taiwan)
T. S. Ko, National Chiao Tung Univ. (Taiwan)
T. C. Lu, National Chiao Tung Univ. (Taiwan)
H. C. Kuo, National Chiao Tung Univ. (Taiwan)
S. C. Wang, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 6894:
Gallium Nitride Materials and Devices III
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Euijoon Yoon, Editor(s)

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