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Proceedings Paper

Temperature dependence of radiative and Auger losses in quantum well lasers
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Paper Abstract

Fully microscopic many-body models are used to ivestigate the temperature dependence of radiative and Auger losses in semiconductor lasers. Classical estimates based on simplified models predict carrier density independent temperature dependencies, 1/T for the radiative losses and a temperature activated exponential dependence for the Auger losses. Instead, the micorscopic models reveal for the example of a typical InGaAsP-based structure a 1/T3-dependence for the radiative losses at low carrier densities. For high densities this dependence becomes much weaker and deviates from a simple power law. Auger losses can be described by an exponential dependence for limited temperature ranges if a density dependent activation energy is used. For the threhsold carrier density a temperature dependence close to T2 is found instead of the linear temperature dependence assumed by the simplified models.

Paper Details

Date Published: 22 February 2008
PDF: 9 pages
Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 68890E (22 February 2008); doi: 10.1117/12.761976
Show Author Affiliations
J. Hader, Nonlinear Control Strategies Inc. (United States)
Optical Sciences Ctr., Univ. of Arizona (United States)
J. V. Moloney, Nonlinear Control Strategies Inc. (United States)
Optical Sciences Ctr., Univ. of Arizona (United States)
S. W. Koch, Philipps-Univ. Marburg (Germany)


Published in SPIE Proceedings Vol. 6889:
Physics and Simulation of Optoelectronic Devices XVI
Marek Osinski; Fritz Henneberger; Keiichi Edamatsu, Editor(s)

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