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Proceedings Paper

High-power laser arrays with 100% fill factor emission facet
Author(s): Dan A. Yanson; Stewart D McDougall; Bocang Qiu; Valentin Loyo-Maldonado; Gianluca Bacchin; Stephen Robertson; Sébastien Bon; John H. Marsh
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Paper Abstract

Novel types of laser diode array with a 100% filling factor at the emission facet are reported. The arrays utilize both parallel and tapered cavity emitters that are connected via a common Laterally Unconfined Non-Absorbing Mirror (LUNAM) defined with quantum-well intermixing technology at 808 nm wavelength. Two LUNAM array types are considered: incoherent (weakly coupled) and coherent (diffraction coupled). Incoherent LUNAM arrays benefit from a reduced power density at the facet, improving reliability, and a near-uniform intensity distribution across the array aperture. Stacked laser diode arrays built with LUNAM bars deliver 950 W power under QCW operation with <5% degradation at 1.9×108 shots. Novel coherent arrays are realized using a monolithically integrated LUNAM Talbot cavity. The devices produce a single-lobed horizontal far-field pattern over a limited current range with <10% slope efficiency penalty compared to an uncoupled case. The LUNAM arrays are promising candidates for high-power, high-brightness and high-reliability operation.

Paper Details

Date Published: 29 January 2008
PDF: 10 pages
Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69091B (29 January 2008); doi: 10.1117/12.761799
Show Author Affiliations
Dan A. Yanson, Intense, Ltd. (United Kingdom)
Stewart D McDougall, Intense, Ltd. (United Kingdom)
Bocang Qiu, Intense, Ltd. (United Kingdom)
Valentin Loyo-Maldonado, Intense, Ltd. (United Kingdom)
Gianluca Bacchin, Intense, Ltd. (United Kingdom)
Stephen Robertson, Intense, Ltd. (United Kingdom)
Sébastien Bon, Intense, Ltd. (United Kingdom)
John H. Marsh, Intense, Ltd. (United Kingdom)

Published in SPIE Proceedings Vol. 6909:
Novel In-Plane Semiconductor Lasers VII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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