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Proceedings Paper

True-blue InGaN laser for pico size projectors
Author(s): U. Strauβ; S. Brüninghoff; M. Schillgalies; C. Vierheilig; N. Gmeinwieser; V. Kümmler; G. Brüderl; S. Lutgen; A. Avramescu; D. Queren; D. Dini; C. Eichler; A. Lell; U. T. Schwarz
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Paper Abstract

Red, green and blue semiconductor lasers are of great interest for full color laser projection. Mobile applications require low power consumption and very small laser devices. InGaN lasers are the best choice for the blue color in applications with output power requirements below 100mW: (1) they have much higher wall plug efficiencies than conventional blue frequency doubled diode pumped solid state lasers and (2) they are more compact than semiconductor IR lasers with subsequent second harmonic generation. We present blue InGaN lasers with high efficiency at a power consumption of several 100mW. Excellent epitaxial quality permits low internal losses. Threshold current densities and slope efficiencies are further optimized by improving the facet coating. The laser threshold current is as low as 25mA and the slope efficiency reaches 1W/A. We present a wall plug efficiency of 15% at output power levels of 60mW.

Paper Details

Date Published: 15 February 2008
PDF: 8 pages
Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 689417 (15 February 2008); doi: 10.1117/12.761720
Show Author Affiliations
U. Strauβ, OSRAM Opto Semiconductors GmbH (Germany)
S. Brüninghoff, OSRAM Opto Semiconductors GmbH (Germany)
M. Schillgalies, OSRAM Opto Semiconductors GmbH (Germany)
C. Vierheilig, Univ. of Regensburg (Germany)
N. Gmeinwieser, OSRAM Opto Semiconductors GmbH (Germany)
V. Kümmler, OSRAM Opto Semiconductors GmbH (Germany)
G. Brüderl, OSRAM Opto Semiconductors GmbH (Germany)
S. Lutgen, OSRAM Opto Semiconductors GmbH (Germany)
A. Avramescu, OSRAM Opto Semiconductors GmbH (Germany)
D. Queren, OSRAM Opto Semiconductors GmbH (Germany)
D. Dini, OSRAM Opto Semiconductors GmbH (Germany)
C. Eichler, OSRAM Opto Semiconductors GmbH (Germany)
A. Lell, OSRAM Opto Semiconductors GmbH (Germany)
U. T. Schwarz, Univ. of Regensburg (Germany)


Published in SPIE Proceedings Vol. 6894:
Gallium Nitride Materials and Devices III
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Euijoon Yoon, Editor(s)

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