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Proceedings Paper

A high-speed 850-nm optical receiver by integrating Si photodiode and CMOS IC
Author(s): Y. M. Hsin; W. K. Huang; Y. C. Liu; B. E. Yan; W. Z. Chen
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Paper Abstract

In this work, three approaches are proposed to implement high-speed 850-nm optical receivers fully in standard bulk 0.18 μm silicon (Si) CMOS technology. In the first approach, the lateral p-i-n photodiode (PD) with designed block well to limit the photocarriers being generated from the laterally depleted regions is integrated in optical receiver. The receiver consists of TIA, LA, offset-cancellation-network and buffer to provide a conversion gain of 110 dBΩ and data rate of 2.5 Gbps operation. In the second receiver, the spatially modulated PD (SMPD) with -3 dB bandwidth of 590 MHz is integrated in optical receiver with the extra adaptive equalizer and demonstrates a data rate of 3.125 Gbps. Finally, the proposed novel structure of PD eliminates the slow diffusion photocarriers by using body contact design to create a new current path under the PD. A bandwidth of 2.8 GHz with 100 % improvement in PD is obtained. The eye diagrams of PD with cable connected amplifiers at 2.5 Gbps, 4 Gbps and 5 Gbps are demonstrated. Furthermore, the optical receiver's optical-electrical (O-E) conversion bandwidth is also increased from 3.6 GHz to 4.3 GHz. To our knowledge, these are the highest O-E conversion bandwidth of the PD and optical receiver ever reported by using the standard bulk 0.18 μm Si CMOS technology.

Paper Details

Date Published: 8 February 2008
PDF: 14 pages
Proc. SPIE 6899, Photonics Packaging, Integration, and Interconnects VIII, 68990P (8 February 2008); doi: 10.1117/12.761553
Show Author Affiliations
Y. M. Hsin, National Central Univ. (Taiwan)
W. K. Huang, National Central Univ. (Taiwan)
Y. C. Liu, National Central Univ. (Taiwan)
B. E. Yan, National Central Univ. (Taiwan)
W. Z. Chen, National Chiao Tung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 6899:
Photonics Packaging, Integration, and Interconnects VIII
Alexei L. Glebov; Ray T. Chen, Editor(s)

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