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Proceedings Paper

(AlGaIn)N UV LEDs for integrated metal-oxide based ozone sensors
Author(s): J. Wagner; Ch. Y. Wang; C.-C. Röhlig; M. Maier; M. Kunzer; T. Passow; W. Schirmacher; W. Pletschen; V. Cimalla; K. Köhler; O. Ambacher
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Paper Abstract

There is a high demand for compact low-cost ozone (O3) sensors. It has been shown that indium oxide (In2O3) thin films grown by metal-organic vapor-phase epitaxy (MOVPE) act as an O3 sensitive material, which can be activated at roomtemperature by ultraviolet (UV) light. In the present work we integrated the In2O3 sensing thin film and an (AlGaIn)N based near-UV LED back-to-back on a single sensor chip. The integrated In2O3 film-LED sensor was exposed to varying ozone concentrations ranging from 38 ppb to 726 ppb and found to be sensitive to even the lowest O3 concentration.

Paper Details

Date Published: 13 February 2008
PDF: 5 pages
Proc. SPIE 6910, Light-Emitting Diodes: Research, Manufacturing, and Applications XII, 69100X (13 February 2008); doi: 10.1117/12.761128
Show Author Affiliations
J. Wagner, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Ch. Y. Wang, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
C.-C. Röhlig, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
M. Maier, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
M. Kunzer, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
T. Passow, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
W. Schirmacher, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
W. Pletschen, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
V. Cimalla, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
K. Köhler, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
O. Ambacher, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)


Published in SPIE Proceedings Vol. 6910:
Light-Emitting Diodes: Research, Manufacturing, and Applications XII
Klaus P. Streubel; Heonsu Jeon, Editor(s)

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