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Proceedings Paper

Investigation of hot electrons generated from AIN/GaN-based high electron mobility transistor
Author(s): Suvranta K. Tripathy; Guibao Xu; Xiaodong Mu; Yujie J. Ding; Kejia Wang; Yu Cao; Debdeep Jena; Jacob B. Khurgin
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Paper Abstract

We have observed that the temperature of the electrons drifting under a relatively-high electric field in an AlN/GaN-based high-electron-mobility transistor is significantly higher than the lattice temperature (i.e. the hot electrons are generated). These hot electrons are produced through the Fröhlich interaction between the drifting electrons and long-lived longitudinal-optical phonons. By fitting electric field vs. electron temperature deduced from the measurements of photoluminescence spectra to a theoretical model, we have deduced the longitudinal-optical-phonon emission time for each electron is to be on the order of 100 fs. This value is consistent with the value measured previously from Raman scattering.

Paper Details

Date Published: 14 February 2008
PDF: 5 pages
Proc. SPIE 6892, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII, 689208 (14 February 2008); doi: 10.1117/12.761013
Show Author Affiliations
Suvranta K. Tripathy, Lehigh Univ. (United States)
Guibao Xu, Lehigh Univ. (United States)
Xiaodong Mu, Lehigh Univ. (United States)
Yujie J. Ding, Lehigh Univ. (United States)
Kejia Wang, Univ. of Notre Dame (United States)
Yu Cao, Univ. of Notre Dame (United States)
Debdeep Jena, Univ. of Notre Dame (United States)
Jacob B. Khurgin, Johns Hopkins Univ. (United States)

Published in SPIE Proceedings Vol. 6892:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII
Jin-Joo Song; Kong-Thon Tsen; Markus Betz; Abdulhakem Y. Elezzabi, Editor(s)

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