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Proceedings Paper

Solid state saturable absorbers for Q-switching at 1 and 1.3 um: investigation and modeling
Author(s): Jan Šulc; Pavel Arátor; Helena Jelínková; Karel Nejezchleb; Václav Škoda; Milan R. Kokta
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Paper Abstract

Yttrium and Lutecium garnets (YAG and LuAG) doped by Chromium or Vanadium ions (Cr4+ or V3+) were investigated as saturable absorbers potentially useful for passive Q-switching at wavelengths 1 μm and/or 1.3 μm. For comparison also color center saturable absorber LiF:F-2 and Cobalt doped spinel (Co:MALO) were studied. Firstly, low power absorption spectra were recorded for all samples. Next, absorbers transmission in dependence on incident energy/power density was measured using the z-scan method. Crystals Cr:YAG, Cr:LuAG, V:YAG, and LiF:F-2 were tested at wavelength 1064 nm. Therefore Alexandrite laser pumped Q-switched Nd:YAG laser was used as a radiation source (pulse length 6.9 ns, energy up to 1.5 mJ). Crystals V:YAG, V:LuAG, and Co:MALO were tested at wavelength 1338 nm. So diode pumped Nd:YAG/V:YAG microchip laser was used as a radiation source (pulse length 6.2 ns, energy up to 0.1 mJ). Using measured data fitting, and by their comparison with numerical model of a "thick" saturable absorber transmission for Q-switched Gaussian laser beam, following parameters were estimated: saturable absorber initial transmission T0, saturation energy density ws, ground state absorption cross-section σGSA, saturated absorber transmission Ts, excited state absorption cross-section σESA, ratio γ = σGSAESA, and absorbing ions density. For V:YAG crystal, a polarization dependence of Ts was also investigated. With the help of rate equation numerical solution, an impact of saturable absorber parameters on generated Q-switched pulse properties was studied in plane wave approximation. Selected saturable absorbers were also investigated as a Q-switch and results were compared with the model.

Paper Details

Date Published: 14 February 2008
PDF: 11 pages
Proc. SPIE 6871, Solid State Lasers XVII: Technology and Devices, 68712D (14 February 2008); doi: 10.1117/12.760946
Show Author Affiliations
Jan Šulc, Czech Technical Univ. (Czech Republic)
Pavel Arátor, Czech Technical Univ. (Czech Republic)
Helena Jelínková, Czech Technical Univ. (Czech Republic)
Karel Nejezchleb, Crytur Ltd. (Czech Republic)
Václav Škoda, Crytur Ltd. (Czech Republic)
Milan R. Kokta, Saint-Gobain Crystals (United States)

Published in SPIE Proceedings Vol. 6871:
Solid State Lasers XVII: Technology and Devices
W. Andrew Clarkson; Norman Hodgson; Ramesh K. Shori, Editor(s)

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