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Proceedings Paper

High-power diode lasers for the 1.9 to 2.2 um wavelength range
Author(s): Márc T. Kelemen; Jürgen Gilly; Rudolf Moritz; Marcel Rattunde; Johannes Schmitz; Joachim Wagner
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Paper Abstract

GaSb based diode laser both as single emitters and as arrays, emitting between 1.9 and 2.2 μm, have a huge potential especially for materials processing, medical applications and as optical pump sources for solid state laser systems emitting in the 2-4 μm wavelength range. Determined by the absorption characteristics of thermoplastic materials at wavelengths around 2 μm, the light emitted by the diode laser will be absorbed by the material itself and can thus be used for marking and welding without the addition of e.g. colour pigments. We will present results on different (AlGaIn)(AsSb) quantum-well diode laser single emitters and linear laser arrays, the latter consisting of 20 emitters on a 1 cm long bar, emitting at different wavelengths between 1.9 and 2.2 μm. To improve on the typically poor fast axis beam divergence of diode lasers emitting at these wavelengths, we abandoned the broadened waveguide concept and changed over to a new waveguide design which features a rather narrow waveguide core. This results in a remarkable reduction in fast axis beam divergence to 43° FWHM for the new waveguide design. Electro-optical and thermal behaviour and the wavelength tunability by current and temperature have been carefully investigated in detail. For single emitters cw output powers of 2 W have been demonstrated. For diode laser arrays mounted on actively cooled heat sinks, more than 20 W in continuous-wave mode have been achieved at a heat sink temperature of 20 °C resulting in wall-plug efficiencies of more than 26%.

Paper Details

Date Published: 13 February 2008
PDF: 8 pages
Proc. SPIE 6876, High-Power Diode Laser Technology and Applications VI, 68760E (13 February 2008); doi: 10.1117/12.760923
Show Author Affiliations
Márc T. Kelemen, m2k-laser GmbH (Germany)
Jürgen Gilly, m2k-laser GmbH (Germany)
Rudolf Moritz, m2k-laser GmbH (Germany)
Marcel Rattunde, Fraunhofer Institut für Angewandte Festkörperphysik (Germany)
Johannes Schmitz, Fraunhofer Institut für Angewandte Festkörperphysik (Germany)
Joachim Wagner, Fraunhofer Institut für Angewandte Festkörperphysik (Germany)

Published in SPIE Proceedings Vol. 6876:
High-Power Diode Laser Technology and Applications VI
Mark S. Zediker, Editor(s)

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