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Proceedings Paper

Controlled growth of ZnO nanowires by nanoparticle-assisted laser ablation deposition
Author(s): T. Okada; R. Guo; J. Nishimura; M. Matsumoto; M. Higashihata; D. Nakamura
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Paper Abstract

Vertically aligned ZnO nanowires have been successfully synthesized on c-cut sapphire substrates by a catalyst-free nanoparticle-assisted pulsed-laser ablation deposition (NAPLD) in Ar and N2 background gases. In NAPLD, the nanoparticles formed in a background gas by laser ablation are used as a starting material for the growth of the nanowires. The surface density of the nanowires can be controlled by varying the density of nanoparticles, which are accomplished by changing the energy of the ablation laser, the repetition rate of the laser and so on. When single ZnO nanowire synthesized in a N2 background gas was excited by 355 nm laser-pulse with a pulse-width of 8 ns, stimulated emission was clearly observed, indicating high quality of the nanowire. These nanowires were used as building blocks for an ultraviolet light emitting diode with a structure of n-ZnO/ZnO nanowire/p-GaN.

Paper Details

Date Published: 15 February 2008
PDF: 7 pages
Proc. SPIE 6895, Zinc Oxide Materials and Devices III, 68950S (15 February 2008); doi: 10.1117/12.760922
Show Author Affiliations
T. Okada, Kyushu Univ. (Japan)
R. Guo, Fudan Univ. (China)
J. Nishimura, Kyushu Univ. (Japan)
M. Matsumoto, Kyushu Univ. (Japan)
M. Higashihata, Kyushu Univ. (Japan)
D. Nakamura, Kyushu Univ. (Japan)


Published in SPIE Proceedings Vol. 6895:
Zinc Oxide Materials and Devices III
Ferechteh Hosseini Teherani; Cole W. Litton, Editor(s)

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