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Proceedings Paper

High-brightness diode lasers with very narrow vertical divergence
Author(s): Götz Erbert; Frank Bugge; Bernd Eppich; Joerg Fricke; Karl-Heinz Hasler; Katrin Paschke; Agnieszka Pietrzak; Hans Wenzel; Günther Tränkle
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Paper Abstract

A narrow vertical divergence of about 30° including 95% of power is highly desired in many applications. Principal designs for narrow divergence diode lasers like simple broad waveguide and more sophisticated resonant waveguide structures are discussed. Devices with narrow divergence could be realized in the wavelength range 800nm to 1060nm using very broad waveguide structures. More than 1W in fundamental mode and about 5W nearly diffraction limited output could be achieved from ridge waveguide laser and from diode lasers with tapered resonator structure, respectively.

Paper Details

Date Published: 5 February 2008
PDF: 11 pages
Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69090P (5 February 2008); doi: 10.1117/12.760874
Show Author Affiliations
Götz Erbert, Ferdinand-Braun-Institut (Germany)
Frank Bugge, Ferdinand-Braun-Institut (Germany)
Bernd Eppich, Ferdinand-Braun-Institut (Germany)
Joerg Fricke, Ferdinand-Braun-Institut (Germany)
Karl-Heinz Hasler, Ferdinand-Braun-Institut (Germany)
Katrin Paschke, Ferdinand-Braun-Institut (Germany)
Agnieszka Pietrzak, Ferdinand-Braun-Institut (Germany)
Hans Wenzel, Ferdinand-Braun-Institut (Germany)
Günther Tränkle, Ferdinand-Braun-Institut (Germany)


Published in SPIE Proceedings Vol. 6909:
Novel In-Plane Semiconductor Lasers VII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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