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Proceedings Paper

BiCMOS phototransistors
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Paper Abstract

In this work we present experimental results of silicon-only bipolar phototransistors fabricated in a 0.35μm commercial BiCMOS technology without process modifications. The transistors are characterized over a wide optical spectral range at 410nm, 675nm, 785nm, and 850nm, providing significantly improved -3dB bandwidths up to 390MHz @ 410nm light and responsivities of 1.76A/W @ 675nm corresponding to quantum efficiencies of 359% normalized in terms of the quantum efficiency of a silicon photodiode.

Paper Details

Date Published: 26 April 2008
PDF: 8 pages
Proc. SPIE 7003, Optical Sensors 2008, 70030J (26 April 2008); doi: 10.1117/12.760388
Show Author Affiliations
Artur Marchlewski, Vienna Univ. of Technology (Austria)
Horst Zimmermann, Vienna Univ. of Technology (Austria)

Published in SPIE Proceedings Vol. 7003:
Optical Sensors 2008
Francis Berghmans; Patrick P. Meyrueis; Thomas P. Pearsall; Anna Grazia Mignani; Antonello Cutolo, Editor(s)

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