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Proceedings Paper

III-V silicon heterogeneous integration for integrated transmitters and receivers
Author(s): D. Van Thourhout; J. Van Campenhout; G. Roelkens; J. Brouckaert; R. Baets
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Paper Abstract

Silicon is excellent material for realizing compact nanophotonic ICs operating at wavelengths in the telecom range. Moreover, the desired circuits can be realized with the most advanced equipment available, used also for the fabrication of high-end electronic circuits. Efficient light emission and amplification directly from silicon remains a bottleneck however. Therefore, we developed an alternative approach, based on the heterogeneous integration of III-V epitaxial material and silicon nanophotonic circuits. Following fabrication and planarization of the latter, small unprocessed dies of InP-based epitaxial material are bonded on top. Next, the substrate of these dies is removed down to an etch stop layer. Finally the desired active optoelectronic devices are processed in the remaining III-V layers using waferscale processes. The critical alignment between the sources and the underlying nanophotonic circuits is ensured through accurate lithography. In this paper we review some recent devices fabricated through this integration process.

Paper Details

Date Published: 28 February 2008
PDF: 4 pages
Proc. SPIE 6896, Integrated Optics: Devices, Materials, and Technologies XII, 68960X (28 February 2008); doi: 10.1117/12.760376
Show Author Affiliations
D. Van Thourhout, Ghent Univ. (Belgium)
J. Van Campenhout, Ghent Univ. (Belgium)
G. Roelkens, Ghent Univ. (Belgium)
J. Brouckaert, Ghent Univ. (Belgium)
R. Baets, Ghent Univ. (Belgium)

Published in SPIE Proceedings Vol. 6896:
Integrated Optics: Devices, Materials, and Technologies XII
Christoph M. Greiner; Christoph A. Waechter, Editor(s)

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