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Proceedings Paper

Effect of indium tin oxide (ITO) current spreading layer on the current uniformity of vertical structure GaN-based light-emitting diodes
Author(s): Zhiqiang Liu; Debo Guo; Xiaoyan Yi; Yu Chen; Libin Wang; Liangchen Wang; Guohang Wang
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Paper Abstract

Compared with conventional GaN based LEDs structure, vertical electrodes structure can improve the current uniformity to some extend. However, due to the presence of N-GaN series resistance, current crowing phenomenon still exist at the electrode edge of vertical structure GaN-based LEDs. The most common solutions to overcome these problems consist in using transparent current spreading contact layer, generally made of indium tin oxide (ITO). In this paper, the effect of indium tin oxide (ITO) layer on the current uniformity and the current distribution are analyzed by theoretical calculation. At last, vertical structure GaN-based LEDs was fabricated and the electrical character was measured. Experiment result exhibits good agreement with the theoretical calculation.

Paper Details

Date Published: 4 January 2008
PDF: 4 pages
Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68410N (4 January 2008); doi: 10.1117/12.760221
Show Author Affiliations
Zhiqiang Liu, Research & Development Ctr. for Semiconductor Lighting (China)
Debo Guo, Research & Development Ctr. for Semiconductor Lighting (China)
Xiaoyan Yi, Research & Development Ctr. for Semiconductor Lighting (China)
Yu Chen, Research & Development Ctr. for Semiconductor Lighting (China)
Libin Wang, Research & Development Ctr. for Semiconductor Lighting (China)
Liangchen Wang, Research & Development Ctr. for Semiconductor Lighting (China)
Guohang Wang, Research & Development Ctr. for Semiconductor Lighting (China)


Published in SPIE Proceedings Vol. 6841:
Solid State Lighting and Solar Energy Technologies
Jinmin Li; Ling Wu; Yubo Fan; Yong-Hang Zhang; Michael E. Coltrin; Yuwen Zhao; Nuofu Chen; Vladimir M. Andreev; Jai Singh, Editor(s)

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