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Proceedings Paper

Mechanisms and high performances of chlorine-treated GaN ultraviolet photodetectors
Author(s): Ching-Ting Lee; Hsin-Ying Lee; Chih-Chien Lin; Po-Sung Chen
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Paper Abstract

A chlorination surface treatment was used to reduce the surface states of an n-type GaN surface, which improves the Schottky performances of the resultant metal-semiconductor contact. At a reverse bias of 10V, the dark current of the GaN-based UV-PDs with and without chlorinated surface treated were 28.1nA and 0.59μA, respectively. The dark current of chlorine-treated Schottky UV-PDs was 21 times of magnitude smaller than that of those without chlorination treatment. The product of quantum efficiency and internal gain of the GaN Schottky UV-PDs without and with chlorination treatment under a reverse voltage of 10V at a wavelength of 330nm was 650% and 100%, respectively. The internal gain of chlorine-treated GaN UV-PDs can be reduced due to the improvement of surface state density.

Paper Details

Date Published: 8 January 2008
PDF: 5 pages
Proc. SPIE 6838, Optoelectronic Devices and Integration II, 68380M (8 January 2008); doi: 10.1117/12.760196
Show Author Affiliations
Ching-Ting Lee, National Cheng Kung Univ. (Taiwan)
Hsin-Ying Lee, National Cheng Kung Univ. (Taiwan)
Chih-Chien Lin, National Cheng Kung Univ. (Taiwan)
Po-Sung Chen, National Cheng Kung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 6838:
Optoelectronic Devices and Integration II
Xuping Zhang; Hai Ming; Maggie Yihong Chen, Editor(s)

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