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Proceedings Paper

Native deep level defects in ZnO single crystal grown by CVT method
Author(s): Youwen Zhao; Fan Zhang; Rui Zhang; Zhiyuan Dong; Xuecheng Wei; Yiping Zeng; Jinmin Li
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Paper Abstract

Hall effect, photoluminescence (PL), infrared absorption, deep level transient spectroscopy (DLTS), and Raman scattering have been used to study property and defects of ZnO single crystal grown by a chemical vapor transport method (CVT). As-grown ZnO is N type with free electron density of 1016-1017cm-3. It has a slight increase after 900°C annealing in oxygen ambient. The DLTS measurement revealed four deep level defects with energy at 0.30eV, 0.50eV, 0.68eV and 0.90eV in the as-grown ZnO sample, respectively. After the high temperature annealing, only the 0.5eV defect survive and has a concentration increase. PL results of the as-grown and annealed ZnO indicate that the well-known green emission disappear after the annealing. The result suggests a correlation between the 0.68eV defect and the green PL peak. Results of P-doped ZnO were also compared with the undoped ZnO sample. The nature of the defects and their influence on the material property have been discussed.

Paper Details

Date Published: 4 January 2008
PDF: 5 pages
Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68410I (4 January 2008); doi: 10.1117/12.760142
Show Author Affiliations
Youwen Zhao, Institute of Semiconductors (China)
Fan Zhang, Institute of Semiconductors (China)
Rui Zhang, Institute of Semiconductors (China)
Zhiyuan Dong, Institute of Semiconductors (China)
Xuecheng Wei, Institute of Semiconductors (China)
Yiping Zeng, Institute of Semiconductors (China)
Jinmin Li, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 6841:
Solid State Lighting and Solar Energy Technologies
Jinmin Li; Ling Wu; Yubo Fan; Yong-Hang Zhang; Michael E. Coltrin; Yuwen Zhao; Nuofu Chen; Vladimir M. Andreev; Jai Singh, Editor(s)

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