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Proceedings Paper

Singlemode 1.1 µm InGaAs quantum well microstructured photonic crystal VCSEL
Author(s): Renaud Stevens; Philippe Gilet; Alexandre Larrue; Laurent Grenouillet; Nicolas Olivier; Philippe Grosse; Karen Gilbert; Raphael Teysseyre; Alexei Chelnokov
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Paper Abstract

In this article, we present our results on long wavelength (1.1 μm) single-mode micro-structured photonic crystal strained InGaAs quantum wells VCSELs for optical interconnection applications. Single fundamental mode roomtemperature continuous-wave lasing operation was demonstrated for devices designed and processed with a number of different two-dimensional etched patterns. The conventional epitaxial structure was grown by Molecular Beam Epitaxy (MBE) and contains fully doped GaAs/AlGaAs DBRs, one oxidation layer and three strained InGaAs quantum wells. The holes were etched half-way through the top-mirror following various designs (triangular and square lattices) and with varying hole's diameters and pitches. At room temperature and in continuous wave operation, micro-structured 50 µm diameter mesa VCSELs with 10 μm oxidation aperture exhibited more than 1 mW optical power, 2 to 5 mA threshold currents and more than 30 dB side mode suppression ratio at a wavelength of 1090 nm. These structures show slight power reduction but similar electrical performances than unstructured devices. Systematic static electrical, optical and spectral characterization was performed on wafer using an automated probe station. Numerical modeling using the MIT Photonic-Bands (MPB [1]) package of the transverse modal behaviors in the photonic crystal was performed using the plane wave method in order to understand the index-guiding effects of the chosen patterns, and to further optimize the design structures for mode selection at extended wavelength range.

Paper Details

Date Published: 1 February 2008
PDF: 10 pages
Proc. SPIE 6908, Vertical-Cavity Surface-Emitting Lasers XII, 69080D (1 February 2008); doi: 10.1117/12.760052
Show Author Affiliations
Renaud Stevens, CEA-LETI MINATEC, Lab. de Photonique sur Silicium (France)
Philippe Gilet, CEA-LETI MINATEC, Lab. de Photonique sur Silicium (France)
Alexandre Larrue, CEA-LETI MINATEC, Lab. de Photonique sur Silicium (France)
Laurent Grenouillet, CEA-LETI MINATEC, Lab. de Photonique sur Silicium (France)
Nicolas Olivier, CEA-LETI MINATEC, Lab. de Photonique sur Silicium (France)
Philippe Grosse, CEA-LETI MINATEC, Lab. de Photonique sur Silicium (France)
Karen Gilbert, CEA-LETI MINATEC, Lab. de Photonique sur Silicium (France)
Raphael Teysseyre, CEA-LETI MINATEC, Lab. de Photonique sur Silicium (France)
Alexei Chelnokov, CEA-LETI MINATEC, Lab. de Photonique sur Silicium (France)


Published in SPIE Proceedings Vol. 6908:
Vertical-Cavity Surface-Emitting Lasers XII
Chun Lei; James K. Guenter, Editor(s)

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