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Proceedings Paper

Improvement of GaN-based light emitting diodes performance grown on sapphire substrates patterned by wet etching
Author(s): Haiyong Gao; Fawang Yan; Yang Zhang; Jinmin Li; Yiping Zeng; Guohong Wang; Fuhua Yang
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Paper Abstract

An effective approach to enhance the light output power of InGaN/GaN light emitting diodes (LED) was proposed using pyramidal patterned sapphire substrates (PSS). The sapphire substrates were patterned by a selective chemical wet etching technique. GaN-based LEDs were fabricated on patterned sapphire substrates through metal organic chemical deposition (MOCVD). The LEDs fabricated on patterned sapphire substrates exhibit excellent device performance compared to the conventional LEDs fabricated on planar sapphire substrates in the case of the same growth and device fabricating conditions. The light output power of the LEDs fabricated on patterned sapphire substrates was about 37% higher than that of LEDs on planar sapphire substrates at an injection current of 20 mA. The significant enhancement is attributable to the improvement of the quality of GaN-based epilayers and improvement of the light extraction efficiency by patterned sapphire substrates.

Paper Details

Date Published: 4 January 2008
PDF: 6 pages
Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 684107 (4 January 2008); doi: 10.1117/12.760029
Show Author Affiliations
Haiyong Gao, Institute of Semiconductors (China)
Fawang Yan, Institute of Semiconductors (China)
Yang Zhang, Institute of Semiconductors (China)
Jinmin Li, Institute of Semiconductors (China)
Yiping Zeng, Institute of Semiconductors (China)
Guohong Wang, Institute of Semiconductors (China)
Fuhua Yang, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 6841:
Solid State Lighting and Solar Energy Technologies
Jinmin Li; Ling Wu; Yubo Fan; Yong-Hang Zhang; Michael E. Coltrin; Yuwen Zhao; Nuofu Chen; Vladimir M. Andreev; Jai Singh, Editor(s)

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