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Proceedings Paper

The fabrication of high-brightness and high-power InGaAlP single-side red LED
Author(s): Pingjuan Niu; Xiaoli Wang; Weilian Guo; Huiying Luo; Xiansong Fu; Hongwei Liu; Xiaoyun Li; Guanghua Yang; Haitao Tian
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Paper Abstract

In this paper, it is reported that the design and fabrication of high-brightness and high-power InGaAlP single-side red LED with electrodes which are interdigitated with the fingers. High-brightness and high-power InGaAlP LED is a new kind of visible light LED developed in recent years, which is driven by large current capacity, high luminous efficiency and excellent heat resistance. It has been used in various fields, such as large area displays, traffic lights, brake lights and so on. As compared with the conventional double-side LED, the single-side LED is more flexible to integrate with other devices and its fabrication is simplified. The size of chip is 1mm2. The fabrication of single-side LED, essentially, is the same as conventional LED, involving photolithography, PECVD SiO2, wet etching, evaporating, lift off and rapid thermal annealing using four masks. To control the widths of mesa and N electrode precisely, the selecting etch technique has been adopted, using HCL: H2O:H2O2 as the InGaAlP etching solution. I-V characteristics, light emission spectrum, luminous flux, luminous intensity and luminous efficiency of this LED have been measured. The characteristics are obtained with turn-on voltage of 1.5V and forward current of 400mA at its forward voltage of 3V. The peak wavelength is 635nm, which corresponds to red light, and the Full Width of Half Maximum is 16.4nm at injection current of 350mA. The luminous intensity is 830 mcd. The color coordinates is x=0.6943, y=0.3056 and the color index is 18.4. So we will conclude that the high-brightness and high-power InGaAlP single-side red LED will become new focus in both scientific research and industrial investment for its wide application.

Paper Details

Date Published: 20 November 2007
PDF: 9 pages
Proc. SPIE 6828, Light-Emitting Diode Materials and Devices II, 68280V (20 November 2007); doi: 10.1117/12.759818
Show Author Affiliations
Pingjuan Niu, Tianjin Polytechnic Univ. (China)
Xiaoli Wang, Tianjin Polytechnic Univ. (China)
Weilian Guo, Tianjin Polytechnic Univ. (China)
Huiying Luo, Tianjin Polytechnic Univ. (China)
Xiansong Fu, Tianjin Polytechnic Univ. (China)
Hongwei Liu, Tianjin Polytechnic Univ. (China)
Xiaoyun Li, Tianjin Polytechnic Univ. (China)
Guanghua Yang, Tianjin Polytechnic Univ. (China)
Haitao Tian, Tianjin Polytechnic Univ. (China)

Published in SPIE Proceedings Vol. 6828:
Light-Emitting Diode Materials and Devices II
Jian Wang; Changhee Lee; Hezhou Wang, Editor(s)

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