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Proceedings Paper

Bare wafer metrology challenges in microlithography at 45-nm node and beyond
Author(s): Chunsheng Huang
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Paper Abstract

The shrinking depth of focus (100-150 nm) of high numerical aperture immersion microlithography optics dictates a tight wafer flatness budget. Wafer flatness nanotopography (NT), and edge roll off (ERO) are critical parts of the equation in immersion microlithographic technology at the 45 nm node and beyond. Wafer features at the nanometer level could result not only in focus variation of the litho process, or thin film thickness variation in CMP process, but also in structural defects of the devices. Therefore, the metrology to measure nanometer level features and to control the quality of wafer geometry is a key to the success of IC production at the 45 nm node and beyond.

Paper Details

Date Published: 21 November 2007
PDF: 15 pages
Proc. SPIE 6827, Quantum Optics, Optical Data Storage, and Advanced Microlithography, 682723 (21 November 2007); doi: 10.1117/12.759738
Show Author Affiliations
Chunsheng Huang, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 6827:
Quantum Optics, Optical Data Storage, and Advanced Microlithography
Chris A. Mack; Guangcan Guo; Guofan Jin; Song-hao Liu; Kees A. Schouhamer Immink; Jinfeng Kang; Jun-en Yao; Keiji Shono; Osamu Hirota, Editor(s)

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