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Proceedings Paper

Terahertz electromagnetic response for metamaterial
Author(s): Xue Jiang; Ziyu Yan; Bin Jin; Yu Wang; Cunlin Zhang
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Paper Abstract

Recently, more and more groups are concentrating on learning surface plasma on metal split with sub-wavelength of terahertz. There is a new material which is made of two materials named metamaterial. It is combined with semiconductor and metal materials. Metal parts are made with subwavelength microstructure. Abnormal phenomenon occurred when it is excited by an intense light, showing an enhancement transmission of terahertz wave. In this paper, we design a planar structure composed of gallium arsenide (substrate) and copper (metal). Copper array is plating on a GaAs wafer on order of micron with photoetching technology. The thickness of GaAs and copper layer are 650 and 0.5 micros individually. THz incidence has an enhanced transmission like surface plasmonic resonance with terahertz time-domain system when another exciting lighted on, which made current carriers in photoconductor. This resonance arises from an inductor-capacitor circuit resonance. Comparison is performed between results with and without excitation. The angle of sample plane with terahertz polarization and incidence can affect this electromagnetic response in some degree. Its transmittance with back-incidence is much stronger than that with front-incidence at certain frequencies. This kind of artificial structure has potential abilities in terahertz devices in the future. It is helpful to develop terahertz filter, polarizing film, beam reflector, phase retarder and so on.

Paper Details

Date Published: 4 January 2008
PDF: 9 pages
Proc. SPIE 6840, Terahertz Photonics, 68401K (4 January 2008); doi: 10.1117/12.759611
Show Author Affiliations
Xue Jiang, Capital Normal Univ. (China)
Ziyu Yan, Capital Normal Univ. (China)
Bin Jin, Capital Normal Univ. (China)
Yu Wang, Capital Normal Univ. (China)
Cunlin Zhang, Capital Normal Univ. (China)


Published in SPIE Proceedings Vol. 6840:
Terahertz Photonics
Cunlin Zhang; Xi-Cheng Zhang, Editor(s)

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