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Proceedings Paper

Determination of spontaneous emission quantum efficiency in InGaAs/GaAs quantum well structures
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Paper Abstract

The injection and temperature dependence of the spontaneous emission quantum efficiency of molecular beam epitaxy grown InGaAs/GaAs quantum wells is determined using excitation dependent photoluminescence (PL) measurements. The PL measurements were performed at temperatures from 50 to 300 K using a HeNe pump laser with powers ranging from 0.6 to 35 mW. The quantum efficiency is inferred from the power law predicted by the rate equations that links pump power and integrated PL signal. The peak spontaneous emission quantum efficiency of molecular beam epitaxy (MBE) grown InGaAs/GaAs triple quantum wells is determined to be 0.941 at 300K with an overall best value of 0.992 at 100 K.

Paper Details

Date Published: 15 January 2008
PDF: 8 pages
Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68410D (15 January 2008); doi: 10.1117/12.759592
Show Author Affiliations
Ding Ding, Arizona State Univ. (United States)
Shane R. Johnson, Arizona State Univ. (United States)
Jiang-Bo Wang, Arizona State Univ. (United States)
Shui-Qing Yu, Arizona State Univ. (United States)
Yong-Hang Zhang, Arizona State Univ. (United States)


Published in SPIE Proceedings Vol. 6841:
Solid State Lighting and Solar Energy Technologies
Jinmin Li; Ling Wu; Yubo Fan; Yong-Hang Zhang; Michael E. Coltrin; Yuwen Zhao; Nuofu Chen; Vladimir M. Andreev; Jai Singh, Editor(s)

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