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Proceedings Paper

Mechanical properties measurement of silicon nitride thin films using the bulge test
Author(s): Hun Kee Lee; Seong Hyun Ko; Jun Soo Han; HyunChul Park
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Paper Abstract

The mechanical properties of silicon nitride films are investigated. Freestanding films of silicon nitride are fabricated using the MEMS technique. The films were deposited onto (100) silicon wafers by LPCVD (Low Pressure Chemical Vapor Deposition). Square and rectangular membranes are made by anisotropic etching of the silicon substrates. Then the bulge test for silicon nitride film was carried out. The thickness of specimens was 0.5, 0.75 and 1μm respectively. By testing both square and rectangular membranes, the reliability and valiant-ness of bulge test with regard to the shape of specimens was investigated. Also considering residual stress in the films, one can evaluate the Young's modulus from experimental load-deflection curves. Young's modulus of the silicon nitride films was about 232GPa. The residual stress is below 100MPa.

Paper Details

Date Published: 21 December 2007
PDF: 8 pages
Proc. SPIE 6798, Microelectronics: Design, Technology, and Packaging III, 67981C (21 December 2007); doi: 10.1117/12.759587
Show Author Affiliations
Hun Kee Lee, Pohang Univ. of Science and Technology (South Korea)
Seong Hyun Ko, Pohang Univ. of Science and Technology (South Korea)
Jun Soo Han, LG Electronics (South Korea)
HyunChul Park, Pohang Univ. of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 6798:
Microelectronics: Design, Technology, and Packaging III
Alex J. Hariz; Vijay K. Varadan, Editor(s)

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