Share Email Print
cover

Proceedings Paper

Low-voltage organic strain sensor on plastic using polymer/high- K inorganic hybrid gate dielectrics
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this paper, gate-induced pentacene semiconductor strain sensors based on hybrid-gate dielectrics using poly-vinylphenol (PVP) and high-K inorganic, Ta2O5 are fabricated on flexible substrates, polyethylene naphthalate (PEN). The Ta2O5 gate dielectric layer is combined with a thin PVP layer to obtain very smooth and hydrophobic surfaces which improve the molecular structures of pentacene films. The PVP-Ta2O5 hybrid-gate dielectric films exhibit a high dielectric capacitance and low leakage current. The sensors adopting thin film transistor (TFT)-like structures show a significantly reduced operating voltage (~6V), and good device characteristics with a field-effect mobility of 1.89 cm2/V•s, a threshold voltage of -0.5 V, and an on/off ratio of 103. The strain sensor, one of the practical applications in large-area organic electronics, was characterized with different bending radii of 50, 40, 30, and 20 mm. The sensor output signals were significantly improved with low-operating voltages.

Paper Details

Date Published: 21 December 2007
PDF: 7 pages
Proc. SPIE 6798, Microelectronics: Design, Technology, and Packaging III, 679810 (21 December 2007); doi: 10.1117/12.759497
Show Author Affiliations
Soyoun Jung, Univ. of Arkansas (United States)
Taeksoo Ji, Univ. of Arkansas (United States)
Vijay K. Varadan, Univ. of Arkansas (United States)


Published in SPIE Proceedings Vol. 6798:
Microelectronics: Design, Technology, and Packaging III
Alex J. Hariz; Vijay K. Varadan, Editor(s)

© SPIE. Terms of Use
Back to Top