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Proceedings Paper

The investigations of InAs quantum dots overgrown on In0.1Ga0.9As surfactant layer and 10° off-angle (100) GaAs substrate
Author(s): Shiang-Feng Tang; Min-Yu Hsu; Cheng-Der Chiang; C.-C. Su; Chuan-Pu Liu; Yu-Ching Fang
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Paper Abstract

For propose of achieving the high coherent quantum dots or the expected spectral emission, we have proposed the epitaxial method solved by using self-organized grown on the InxGa1-xAs relaxed layer and the mis-orientated GaAs substrates. In this study, using extra slow growth rate of 0.075ML/sec to grow the quantum dot matrix under the temperature of 500°C by the general Riber 32P solid-source MBE system, the high surface density and uniformity in size of two-stacked of quantum dot (QD) matrix have been established. The temperature dependences of the full widths at half-maximum (FWHM) and the positions of photoluminescence (PL) bands are studied experimentally by adding In0.1Ga0.9As surfactant layer and using mis-orientated substrate, respectively. The 3-dimensional QD images using atomic force microscopy (AFM) well agree with the results of above mentioned. Therefore, a systematic estimate is given of the QD structures grown on different epitaxial conditions.

Paper Details

Date Published: 9 January 2008
PDF: 7 pages
Proc. SPIE 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV, 68001E (9 January 2008); doi: 10.1117/12.759448
Show Author Affiliations
Shiang-Feng Tang, Chung-Shan Institute of Science and Technology (Taiwan)
Min-Yu Hsu, National Taipei Univ. of Technology (Taiwan)
Cheng-Der Chiang, Chung-Shan Institute of Science and Technology (Taiwan)
C.-C. Su, National Taipei Univ. of Technology (Taiwan)
Chuan-Pu Liu, National Cheng-Kung Univ. (China)
Yu-Ching Fang, Chung-Shan Institute of Science and Technology (China)


Published in SPIE Proceedings Vol. 6800:
Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV
Hark Hoe Tan; Jung-Chih Chiao; Lorenzo Faraone; Chennupati Jagadish; Jim Williams; Alan R. Wilson, Editor(s)

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