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Proceedings Paper

Optimized design on high-power GaN-based micro-LEDs
Author(s): Jingmei Fan; Liangchen Wang; Jinxia Guo; Xiaoyan Yi; Zhiqiang Liu; Guohong Wang; Jinmin Li
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Paper Abstract

The structure of micro-LEDs was optimized designed. Optical, electrical and thermal characteristics of micro-LEDs were improved. The optimized design make micro-LEDs suitable for high-power device. The light extraction efficiency of micro-LEDs was analyzed by the means of ray tracing. The results shows that increasing the inclination angle of sidewall and height of mesa, and reducing the absorption of p and n electrode can enhance the light extraction efficiency of micro-LEDs. Furthermore, the total light output power can be boosted by increasing the density of micro-structures on the device. The high-power flip-chip micro-LEDs were fabricated, which has higher quantum efficiency than conventional BALED's. When the number of microstructure in micro-LEDs was increased by 57%, the light output power was enhanced 24%. Light output power is 82.88mW at the current of 350mA and saturation current is up to 800mA, all of these are better than BALED which was fabricated in the same epitaxial wafer. The I-V characteristics of micro-LEDs are almost identical to BALED.

Paper Details

Date Published: 4 January 2008
PDF: 7 pages
Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 684108 (4 January 2008); doi: 10.1117/12.759302
Show Author Affiliations
Jingmei Fan, Institute of Semiconductors (China)
Liangchen Wang, Institute of Semiconductors (China)
Jinxia Guo, Institute of Semiconductors (China)
Xiaoyan Yi, Institute of Semiconductors (China)
Zhiqiang Liu, Institute of Semiconductors (China)
Guohong Wang, Institute of Semiconductors (China)
Jinmin Li, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 6841:
Solid State Lighting and Solar Energy Technologies
Jinmin Li; Ling Wu; Yubo Fan; Yong-Hang Zhang; Michael E. Coltrin; Yuwen Zhao; Nuofu Chen; Vladimir M. Andreev; Jai Singh, Editor(s)

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