Share Email Print

Proceedings Paper

Very uniform and high-aspect ratio anisotropy through Si via etching process in magnetic neutral loop discharge plasma
Author(s): Yasuhiro Morikawa; Takahide Murayama; Koukou Suu
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Wafer level packaging is important for MEMS to protect micromechanical structures from mechanical stresses, dusts, humidity and other contaminations. Thru Si Via etching is Key technology. In the case of ±5% of CD shift value in the etching conditions for TSV processing, the amount of volume change of thru hole in a wafer is generated about 20% at the maximum. As a result, dispersion of the density and width of Cu wiring occurs, and it leads to the increase in an error due to the margin fall of a circuit. Therefore, not only etching depth uniformity but also uniform control of CD shift is very important for TSV etching. We developed a novel deep silicone etcher "NLD-Si". This equipment has introduced the sputter system into the passivation process in the vertical etching. As a result of film coverage being controllable by optimization of this sputter condition, advanced anisotropic etching was achieved. Furthermore, by using the sputter and NLD (Magnetic Neutral Loop Discharge) plasma uniformity control system at 8 in. wafer, ±1.62% of the anisotropic etch uniformity was achieved in diameter 0.8um via and aspect ratio is above 10.

Paper Details

Date Published: 21 December 2007
PDF: 8 pages
Proc. SPIE 6798, Microelectronics: Design, Technology, and Packaging III, 679812 (21 December 2007); doi: 10.1117/12.759295
Show Author Affiliations
Yasuhiro Morikawa, ULVAC, Inc. (Japan)
Takahide Murayama, ULVAC, Inc. (Japan)
Koukou Suu, ULVAC, Inc. (Japan)

Published in SPIE Proceedings Vol. 6798:
Microelectronics: Design, Technology, and Packaging III
Alex J. Hariz; Vijay K. Varadan, Editor(s)

© SPIE. Terms of Use
Back to Top