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Proceedings Paper

The effects of sapphire substrates processes to the LED efficiency
Author(s): Hua Yang; Yu Chen; Libin Wang; Xiaoyan Yi; Jingmei Fan; Zhiqiang Liu; Fuhua Yang; Liangchen Wang; Guohong Wang; Yiping Zeng; Jinmin Li
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Paper Abstract

We investigate the relation between the thickness of sapphire substrates and the extraction efficiency of LED. The increasing about 5% was observed in the simulations and experiments when the sapphire thickness changed from 100μm to 200μm. But the output power increasing is inconspicuous when the thickness is more than 200μm. The structure on bottom face of sapphire substrates can enhance the extraction efficiency of GaN-based LED, too. The difference of output power between the flip-chip LED with smooth bottom surface and the LED with roughness bottom surface is about 50%, where only a common sapphire grinding process is used. But for those LEDs grown on patterned sapphire substrate the difference is only about 10%. Another kind of periodic pattern on the bottom of sapphire is fabricated by the dry etch method, and the output of the back-etched LEDs is improved about 50% than a common case.

Paper Details

Date Published: 4 January 2008
PDF: 6 pages
Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68410M (4 January 2008); doi: 10.1117/12.759280
Show Author Affiliations
Hua Yang, Institute of Semiconductors (China)
Yu Chen, Institute of Semiconductors (China)
Libin Wang, Institute of Semiconductors (China)
Xiaoyan Yi, Institute of Semiconductors (China)
Jingmei Fan, Institute of Semiconductors (China)
Zhiqiang Liu, Institute of Semiconductors (China)
Fuhua Yang, Institute of Semiconductors (China)
Liangchen Wang, Institute of Semiconductors (China)
Guohong Wang, Institute of Semiconductors (China)
Yiping Zeng, Institute of Semiconductors (China)
Jinmin Li, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 6841:
Solid State Lighting and Solar Energy Technologies
Jinmin Li; Ling Wu; Yubo Fan; Yong-Hang Zhang; Michael E. Coltrin; Yuwen Zhao; Nuofu Chen; Vladimir M. Andreev; Jai Singh, Editor(s)

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