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Proceedings Paper

Determination of charge traps of Al2O3 layers in nonvolatile memory device with oxide-nitride-Al2O3 structures
Author(s): Hoon Young Cho; Woo Sung Cho; Jong Soo Oh; Woo Cheol Yang; Won Sik Kim
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Paper Details

Date Published:
Proc. SPIE 6798, Microelectronics: Design, Technology, and Packaging III, 67981K; doi: 10.1117/12.759262
Show Author Affiliations
Hoon Young Cho, Dongguk Univ. (South Korea)
Woo Sung Cho, Dongguk Univ. (South Korea)
Jong Soo Oh, Dongguk Univ. (South Korea)
Woo Cheol Yang, Dongguk Univ. (South Korea)
Won Sik Kim, Doowon Technical College (South Korea)

Published in SPIE Proceedings Vol. 6798:
Microelectronics: Design, Technology, and Packaging III
Alex J. Hariz; Vijay K. Varadan, Editor(s)

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