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Proceedings Paper

Novel 3D modeling of In0.53Ga0.47As lateral PIN photodiode
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Paper Abstract

The lateral PIN photodiode (LPP) can be fabricated with ease using standard CMOS techniques such as diffusion or ion implantation to form the p+ and n+ wells in the absorbing layer. A novel diffusion-based three-dimensional LPP was modeled utilizing In0.53Ga0.47As as the absorbing layer. Interdigitated electrode structures were used to obtain responsivity of ~0.5-0.6 A/W and -3dB frequency of ~14-15 GHz at a wavelength of 1550 nm, bias voltage of 5V and optical power of 10 Wcm-2. The modeled device is able to cater for 10 Gbit/s optical communication networks.

Paper Details

Date Published: 28 December 2007
PDF: 9 pages
Proc. SPIE 6798, Microelectronics: Design, Technology, and Packaging III, 679819 (28 December 2007); doi: 10.1117/12.759055
Show Author Affiliations
P. Susthitha Menon, Univ. Kebangsaan Malaysia (Malaysia)
Kumarajah Kandiah, Univ. Kebangsaan Malaysia (Malaysia)
Mohd Syuhaimi bin Abd Rahman, Univ. Kebangsaan Malaysia (Malaysia)
Sahbudin Shaari, Univ. Kebangsaan Malaysia (Malaysia)


Published in SPIE Proceedings Vol. 6798:
Microelectronics: Design, Technology, and Packaging III
Alex J. Hariz; Vijay K. Varadan, Editor(s)

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