Share Email Print
cover

Proceedings Paper

The effect of temperature and gas flow on the physical vapour growth of mm-scale rubrene crystals for organic FETs
Author(s): A. R. Ullah; A. P. Micolich; J. W. Cochrane; A. R. Hamilton
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

There has recently been significant interest in rubrene single-crystals grown using physical vapour transport techniques due to their application in high-mobility organic field-effect transistor (OFET) devices. Despite numerous studies of the electrical properties of such crystals, there has only been one study to date focussing on characterising and optimising the crystal growth as a function of the relevant growth parameters. Here we present a study of the dependence of the yield of useful crystals (defined as crystals with at least one dimension of order 1 mm) on the temperature and volume flow of carrier gas used in the physical vapour growth process.

Paper Details

Date Published: 9 January 2008
PDF: 8 pages
Proc. SPIE 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV, 680005 (9 January 2008); doi: 10.1117/12.759015
Show Author Affiliations
A. R. Ullah, Univ. of New South Wales (Australia)
A. P. Micolich, Univ. of New South Wales (Australia)
J. W. Cochrane, Univ. of New South Wales (Australia)
A. R. Hamilton, Univ. of New South Wales (Australia)


Published in SPIE Proceedings Vol. 6800:
Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV
Hark Hoe Tan; Jung-Chih Chiao; Lorenzo Faraone; Chennupati Jagadish; Jim Williams; Alan R. Wilson, Editor(s)

© SPIE. Terms of Use
Back to Top